The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report electromigration techniques for the fabrication of planar-type tunnel junctions with ferromagnetic nanogap system. In these techniques, by monitoring the current passing through the devices, we are easily able to obtain the planar-type Ni-Vacuum-Ni tunnel junctions. In this paper, magnetoresistance (MR) properties of the planar-type Ni-based tunnel junctions formed by stepwise feedback-controlled...
The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper. than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.