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In this paper, an S-band internally harmonic matched GaN FET is presented, which is designed so that up to third harmonic impedance is tuned to high efficiency condition. Harmonic load pull measurements were done for a small transistor cell at first. It was found that power added efficiency (PAE) of 78% together with 6W output power can be obtained by tuning impedances up to 3rd harmonic for both...
An X-band 50 W GaN power amplifier (PA) is presented, mainly focusing on its impedance-matching networks to realize a specified operating bandwidth of 18%. Bandpass impedance-matching networks (IMNs) with Chebyshev response are adopted in the PA, where a FET and a pre-matching transmission line can be approximately seen as a shunt parallel-resonant circuit. Mismatch-loss ripple of the Chebyshev IMN...
An X-band high-power T/R switch utilizing GaN HEMT has been developed. The switching circuit employed an asymmetric series-shunt/shunt configuration with bandwidth extension circuits. By using the circuit topology, the switch circuit can achieve high-power and low-loss performance at Tx-mode and low insertion loss at Rx-mode in broad bandwidth. To verify this methodology, we have fabricated a GaN...
In this paper, GaN HEMT 1-chip high power amplifiers at S and C bands are presented, which are featured by the cell division configuration. Spurious oscillations, which often occur for large gate periphery microwave transistors, were suppressed by dividing 8 transistor cells in a single chip into 4 blocks each consisting of 2 cells and placing isolation resistors on matching circuits. 120 W and 140...
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