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We demonstrate a record-high electro-optic coefficient of r33 = 359 pm/V in a silicon-organic hybrid (SOH) modulator using the electro-optic chromophore JRD1. The π-voltage-length product amounts to UπL = 320 Vμm, enabling error-free 25 Gbit/s signaling at drive voltages of 180 mVpp.
We show coherent wireless transmission at carrier frequencies of 0.25 THz and 0.35 THz, relying exclusively on optoelectronic concepts for RF signal generation and coherent reception. In a proof-of-concept experiment, we demonstrate transmission of a BPSK signal at a symbol rate of 1 GBd.
We demonstrate ultra-fast high-precision distance measurements using a pair of dissipative Kerr-soliton frequency combs. We achieve sub-μm accuracy for static targets and measurement rates of 10 MHz that allow sampling of air-gun bullets on the fly.
We show coherent wireless transmission at carrier frequencies within 0.30+0.02 THz using up to 20 QPSK-modulated subcarriers with a symbol rate of 0.75 GBd each, leading to an aggregate line rate of 30 Gbit/s. We exploit optoelectronic techniques, both for THz generation and coherent reception.
Silicon-plasmonic photodetection based on internal photoemission exploits the intrinsic absorption in plasmonic waveguides at metal-dielectric interfaces. For this purpose we designed an asymmetric metal-semiconductor-metal waveguide with a width of 75 nm. Our plasmonic internal photoemission detector (PIPED) shows a rec-ord-high photocurrent sensitivity of up to S = 0.12 A / W for light at a wavelength...
We demonstrate an eight-channel hybrid multi-chip module comprising InP lasers, silicon photonic modulators, and parallel single-mode fibers, all connected via photonic wire bonds. We transmit 28 GBd PAM-4 signals at a total data rate of 448 Gbit/s over 2 km.
We demonstrate coherent WDM transmission using a pair of quantum-dash mode-locked laser-diodes — one to generate a multitude of optical carriers, and another to generate a multitude of LO tones. We transmit a line rate of 4 Tbit/s (23×45 GBd PDM-QPSK) over 75 km.
100 Gbit/s three-level (50 Gbit/s OOK) signals are generated using a silicon-organic hybrid modulator and a BiCMOS duobinary driver IC at a BER of 8.5×10−5(<10−2). We demonstrate dispersion-compensated transmission over 5 km.
We demonstrate coherent WDM transmission using a quantum-dash mode-locked laser diode with resonant feedback. We report a line rate of 12 Tbit/s (32QAM 60×20 GBd PDM) over 75 km SMF. The spectral efficiency is 7.5 bit/s/Hz.
We generate record-high line rates of 400 Gbit/s (100 GBd 16QAM) using a silicon-based IQ modulator. With a BER=1.9×10"2 we transmit a net data rate of 333 Gbit/s, the highest value for a semiconductor-based modulator.
Blade condition monitoring systems with fiber‐optic sensors attract much attention because they are resistant to lightning strikes, a major issue with increasing blade lengths. However, fiber‐optic sensor systems are more complex and more expensive than their electronic counterparts. We describe a new blade condition monitoring system, which combines the lightning safety of optical fibers with the...
We demonstrate low-loss coupling to single-mode fibers and photonic integrated circuits (PIC) using in-situ fabrication of free-form microlenses on device facets. Measured coupling losses down to 0.8 dB (0.5 dB) are achieved for chip-fiber (fiber-fiber) interfaces.
We demonstrate the first silicon-plasmonic photomixer. THz radiation is generated and received by employing two lasers near 1.5 μm. The receiver sensitivity of 28 mA/(W V) compares well with the sensitivity of a commercial system.
Using a frequency comb from a quantum-dash mode-locked laser-diode, we transmit a line rate of 8.32 Tbit/s (52×40 GBd PDM-QPSK). Isolated comb lines do not show an additional penalty compared to a high-quality ECL.
Interleaving two soliton Kerr combs we generate 179 carriers for WDM transmission and demonstrate transmission of a data stream of 50 Tbit/s over 75 km. This is the highest data rate achieved with a chip-scale comb source.
An overview of high-speed plasmonic-organic hybrid (POH) modulators for BPSK and OOK signaling is presented. The optimum length of POH modulators resulting in maximum optical modulation amplitudes (OMA) are discussed.
We demonstrate coupling of surface and edge emitting InP lasers to silicon photonic chips using photonic wire bonding. We confirm that back-reflections from the silicon chip do not deteriorate the linewidth of the lasers.
With a silicon-based modulator we generate single-polarization 16QAM signals at symbol rates of 63 GBd (252 Gbit/s, 22 fJ/bit, BER = 4.1×10∼3). The experiments show a path towards Si-based 500 Gbit/s dual-polarization single-wavelength transmitters.
Advanced wavelength-division multiplexing (WDM) requires both efficient multi-wavelength light sources to generate optical carriers and highly scalable photonic-electronic interfaces to encode data on these carriers. In this paper, we give an overview on our recent progress regarding silicon-organic hybrid (SOH) integration and comb-based WDM transmission.
Chip-scale frequency comb sources are likely to become key elements of future terabit/s optical transceivers. We investigate and demonstrate the viability of different comb generation schemes for transmission at multi-terabit/s data rates.
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