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The fabrication and characteristics of a novel index-guided phase-locked array are described. A single-lobe far-field pattern was obtained up to the CW output of 100 mW in the 3-element diode laser.
AlGaAs laser arrays with inner stripe configuration have been developed. Transverse mode control was accomplished by introducing nonuniform refractive index and gain distributions, which are built in utilising growth features of liquid-phase epitaxy. The maximum light outputs are 130 mW and 400 mW in CW and pulsed operation, respectively.
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