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We present a study on the quality of AlGaInP epitaxial layers regrown on AlGaInP quaternary alloy grooved structure by low-pressure metalorganic vapor-phase epitaxy (MOVPE). The growth behavior and dislocations in the regrown layers are investigated by cross-sectional transmission electron microscopy (TEM). It is found that the dislocation density in the regrown AlGaInP epitaxial layer depends on...
High-power operation of 650 nm-band GaInP/AlGaInP strained quantum well visible laser diodes were successfully demonstrated by introducing a hydrogenated amorphous-Si film (/spl alpha/-Si:H) for high reflection mirror. The /spl alpha/-Si:H film has lower optical absorption coefficient than conventional hydrogen-free /spl alpha/-Si film. Therefore, heat generation at the rear facet of the laser was...
An index-guided GaAs/AlGaAs multiquantum well laser with etched mirrors has been fabricated by molecular beam epitaxy and a dry etching process. The transverse mode is stabilised by a built-in optical waveguide, which is formed on the substrates with a pair of grooves. The etched mirrors are fabricated by reactive ion beam etching. The lasers with 200 ?m-long cavities exhibit threshold currents as...
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