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The effect of modulation of the effective width of a narrow-channel MOST by the gate voltage is demonstrated using a two-dimensional integral MOS process and device similator. The realistic shapes of the `bird's beak? and doping concentrations allow a numerical analysis of this effect to be made for typical enhancement- and depletion-mode devices, as well as a comparison with the experiment.
In this letter a simple geometric model for evaluating the threshold voltage of an ion-implanted short-channel MOS transistor, taking into account the form of the depletion regions around the source and drain p-n junctions, is presented. The model displays good agreement between the theoretical and experimental results and can be employed for sensitivity evaluation and optimisation of the threshold...
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