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An enhancement/depletion-type GaAs MESFET IC technology has been developed using selective ion implantation into SI GaAs. By reducing the source-gate and the drain-gate spacings down to about 0.4 ?m, the unfavourable effect of the surface state1 was effectively lowered, while guaranteeing sufficient breakdown voltages. The minimum propagation delay of 66 ps was achieved in a 15-stage ring oscillator...
Normally-off GaAs MESFET integrated circuits with a maximum toggle frequency of 2.4 GHz were fabricated by conventional photolithography. The unfavourable effect of the surface depletion layer due to the large state density at the GaAs surface has been reduced by adopting the recessed gate FET structure.
6-GHz 15-Watt and 8-GHz 10-Watt internally matched GaAs FETs have been developed. The lumped-element two section input matching network is formed on ceramic plates with a high dielectric constant. The distributed single section output circuit is formed in microstrip pattern on an alumina plate. A 6-GHz 20-Watt balanced amplifier module has been realized using the internally matched devices which operate...
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