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The transient temperature rise of the active portions of short-pulse high-power TRAPATT-diode structures having relatively wide depletion-layer widths separated from the heatsink by appreciable physical lengths is presented.
TRAPATT oscillators utilizing highly graded p+-n-n+ silicon junction devices with large p-region width to total depletion region width ratios have produced more than 500 W pulsed power output with a minimum efficiency of 25% in the UHF and L-band ranges.
A lumped-element TRAPATT-diode oscillator capable of more than 0.5 kW output power from a single diode chip is described. Peak power of 575 W with 23% efficiency and a maximum efficiency of 28% at 0.5 kW output power have been consistently obtained at approximately 1 GHz.
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