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Twelve different hole traps have been characterised in v.p.e., 1.p.e., m.b.e. and bulk-grown GaAs from d.1.t.s. experiments. Most are related to the presence of different impurities, some of which are identified. Although far from complete, this catalogue of hole traps can be a working tool, particularly for the assessment of the impurity contamination in a material.
Fifteen different electron traps have been characterised in v.p.e., l.p.e., m.b.e. and bulk-grown GaAs from d.l.t.s. experiments. An accurate description of each level is given, and allows a fruitful comparison with fragmentary previous data. A catalogue of these electron traps is provided as a working tool.
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