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The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling...
The paper presents a numerical analysis to predict the behavior of the flexible media by considering the effect of dynamic contact interaction between media and guide, and the aerodynamic forces. The result of numerical model is compared with that of experiment, showing a good agreement under the flexible media condition of low exit velocity. In a state of high exit velocity for the flexible media,...
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