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High temperature (320?C-360?C) life tests of integrated circuits with TiW/Au metalization have resulted in failures due to void formation in the metal films which result in loss of continuity. Hillocks are also observed. The failures occur with and without power applied to the circuits, so electromigration can be discounted as a cause. Failures occur in the vicinity of oxide steps after several hundred...
A series of step stress, accelerated life tests and failure analyses was carried out on microwave power transistors to determine the mechanisms by which they fail, and to obtain an estimate of their expected lifetimes in use. Both gold and aluminum metallized transistors were evaluated, the first time such a direct comparison has been carried out. These tests have revealed that the aluminum devices...
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