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Thermal stability of the high-k/In0.53Ga0.47As interface has been analyzed by both physical and electrical methods for the first time. It has been found that As-O and In-O bonds decompose and Ga-O bonds form above 400°C, as shown by XPS and corroborated by TEM, SIMS and EDX. Electrically, this interface decomposition resulted in increased frequency dispersion (accumulation), C-V shift, and mobility...
We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5 × 1012/cm2) in In0.7Ga0.3As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (Id) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-κ interface, and confining carriers in In0.7Ga0.3As channel using In0.52Al0.48As bottom-barrier,...
This paper presents the optimization and design of a low-loss fixed-tuned 215-235-GHz sub-harmonic mixer, pumped by planar GaAs Schottky diodes fabricated by European company for space-borne radiometers. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. The GaAs Gunn oscillator is used as the local-oscillator (LO) and this paper also...
Deep-submicron In0.7Ga0.3As buried-channel MOSFETs with various gate lengths down to 40 nm are demonstrated. In0.7Ga0.3As buried-channel MOSFETs were fabricated on an epitaxial wafer using an InP/In0.52Al0.48As double barrier. The device characteristics were analysed, including subthreshold swing, transconductance and drive current. Good scaling behaviour was observed for these III-V MOSFETs. For...
The performance and reliability of ZrO2/In0.53Ga0.47As MOSFETs are shown to be improved by simultaneous reduction of dielectric and interface charges. An amorphous (La)AlOx interlayer at the ZrO2/In0.53Ga0.47As interface is a key to reduce border traps, interface traps and move ZrO2 fixed charge away from the In0.53Ga0.47As. Border traps are reduced ~3x, effective fixed charges are reduced ~3x and...
This paper compares device performance for In0.53Ga0.47As MOSFETs using single HfO2 gate dielectric with stacked gate dielectrics using various interfacial layers between HfO2 and In0.53Ga0.47As substrate including Al2O3, HfAlOx, LaAlOx, and LaHfOx. Of the gate stacks studied, Al2O3/HfO2, HfAlOx/HfO2, and LaAlOx/HfO2 bilayer gate dielectrics exhibit lower subthreshold swing, higher drive current and...
The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics...
Using a thin germanium interfacial passivation layer (IPL), for the first time we present surface channel n- and p-MOSFETs on GaAs substrate with TaN gate electrodes and HfO2 dielectric films. We used self-aligned and gate-last processes to fabricate MOSFETs on semi-insulating GaAs substrate. The electrical results from the buried channel and the surface channel-mode transistors are investigated....
Summary form only given. Commercial single-mode distributed Bragg reflector (DBR) laser diodes now produce output powers comparable to commercial single-mode Fabry-Perot laser diodes. Within this presentation, high-power tunable AlGaAs DBR laser diodes with single-mode output powers exceeding 200 mW cw are described. In addition, an 16,000 hr. ongoing lifetest on DBR laser diodes will be presented...
Summary form only given. High-power laser diodes with wavelengths ranging in wavelength from 1.5 to 2.0 /spl mu/m have many applications. Included in these applications are measurement systems. Within this talk data will be presented on high-power broad-area 1.55 /spl mu/m laser diodes that may be used for many of these applications. These data include cw output powers approaching 3 W from a single...
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