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The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.
In this work the authors present a thorough investigation of charge retention in memory cells with SiO2/Al2O 3 interpoly dielectric (IPD) stacks, using a fully planar stacked gate memory cell with self-aligned floating gate. This structure is interesting for future area scaling and allows high-k materials and metal gates to be easily introduced. It is shown that the retention behaviour is determined...
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