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60 MeV boron ion energy transfer in Si power BJT's for the interface charge state density is studied. LET, total ionizing dose and total displacement damage dose are correlated with the observed post-irradiated electrical characteristics.
Electrical parameters were extracted from the analysis of dark and illuminated I-V curves from Si cells irradiated with 40 & 50 MeV Li ions. Non-penetrating radiation (including 25-Mev backside-Li ions) was compared with penetrating-radiation effects.
Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton irradiation. However, an additional, and different, defect mechanism is suggested to dominate in the heavier-ion results. Comparison is made with proton-irradiated...
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