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We review progress in the operating performance and the underlying physical mechanisms of InP quantum dot lasers and demonstrate applications in dual wavelength sources and monolithically integrated optoelectronics and microfluidics for cell sensing.
We measured different types of damage and 24 (plusmn4) MW/cm2 optical-power-density (pulsed) thresholds for catastrophic optical mirror damage in quantum dot lasers compared with 12 (plusmn2) MW/cm2 for quantum wells, in a comparable structure.
We demonstrate MOVPE grown InP q-dot lasers with low threshold current density (195 Acm-2 for 2000 mum long uncoated devices at 300 K) and extended wavelength-coverage (680-740 nm). Modulation p-doping reduces gain saturation in lower confinement structures.
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18deg. T0 is increased from 51 to...
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