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We have extended our Monte Carlo ion implantation simulator for Si1_xGex targets in order to analyze the applicability for advanced CMOS devices. The penetration depth of ion implanted dopants in relaxed SiGe is significantly reduced compared to pure silicon due to the larger nuclear and electronic stopping power. The successful calibration for the simulation of arsenic and boron implantations in...
Layout generation remains a critical bottleneck in analog circuit design. It is especially distracting when re-using an existing design for a similar specification or when transferring a working design to a new technology. This paper presents a new methodology for layout generation of analog circuits that is based on a modular circuit design and a so-called "executable design flow description"...
Behavioural modelling and yield optimization of resistor string based (potentiometer) digital-to-analog-converters (DACs) is presented to improve its reliability and area efficiency with focus on nonideal nanoscale CMOS processes, which suffer from large device tolerances. The optimization potential in terms of yield is analyzed taking systematic and statistical properties into account. Measurements...
The old school of analog designers, exemplified by pioneer Bob Pease, is becoming an extinct species. But the demand for analog/mixed-signal IP blocks has never been greater, especially at 65 nm and below. Can this demand be met by using externally designed 3rd party analog/mixed-signal IP? Or is the implementation of revolutionary changes to traditional work flows and analog design processes a suitable...
Companies estimate the NBTI lifetime of SRAM memories usually by extrapolation of the DC degradation. This method underestimates the lifetime of the memory cell since the bit change in the cell over time is neglected. In this work we have analyzed the impact of storing random bit values in a 6T-SRAM memory cell by using probabilities of storing a one bit between the boundaries of 100% (fully unsymmetric...
We present a Monte Carlo simulation study for introducing boron ions into Ge in the energy range from 5 to 40 keV. The successful calibration of our ion implantation simulator for crystalline Ge is demonstrated by comparing the predicted boron profiles with SIMS measurements. The generation of point defects are calculated with a modified Kinchin-Pease damage model. An implanted boron profile in Ge...
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