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This paper presents a detailed study of the failure mechanisms induced by a forward bias overstress on gallium nitride (GaN) high electron mobility transistors (HEMTs) with p-type gate. DC measurements demonstrate that GaN-HEMTs with p-GaN gate show a time-dependent catastrophic degradation when submitted to forward-gate overstress. Time to failure (TTF) can be described by a Weibull distribution...
This paper describes a laboratory and methodology for the complete assessment of the reliability of microwave and power Gallium Nitride (GaN) devices. Examples related to deep level effects in GaN High Electron Mobility Transistors (HEMTs), to HEMT gate degradation and time dependent breakdown effects are described.
Recent studies on the reliability of power Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), Metal Insulator Semiconductor-HEMTs (MISHEMTs) and p-gate HEMTs are reviewed. When submitted to high electric field values, gate and insulating dielectrics as well as defective epitaxial layers are prone to time dependent breakdown mechanisms, charge trapping phenomena and generation of deep...
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