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This letter reports the first experimental demonstration of time-dependent breakdown in GaN-based light-emitting diodes (LEDs); based on a number of constant voltage stress tests, carried out below the breakdown limit of the devices, we show that: 1) when submitted to reverse-bias stress, the LEDs show a gradual increase in current, well correlated with an increase in the breakdown luminescence signal;...
This paper reviews the most relevant threshold-voltage instabilities and dielectric breakdown mechanisms in GaN-based transistors with metal-insulator-semiconductor gate. Metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) with partially-recessed gate have been submitted to pulsed and constant voltage stress, with the aim of evaluating the impact of charge trapping processes...
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