The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
BackgroundIchthyosis vulgaris (IV) is caused by loss‐of‐function mutations in the profilaggrin (FLG) gene. Filaggrin drives complex interrelated functions, with strategic roles in establishing structural and chemical barrier function, hydration of the skin and maintaining epidermal homeostasis. Data on the effect of FLG mutations on epidermal barrier function in IV are very scarce.
ObjectivesA primary...
This paper presents the potentialities of deep submicron CMOS technologies for millimeter-wave applications. The target applications are firstly overviewed. Then, the nanometer bulk and SOI CMOS technology offer is presented, presenting integration solutions that take benefit of the intrinsic performances of the active device while minimizing the loss effects introduced by the BEOL. Finally, perspectives...
This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then, a large overview of the technological offer to address these applications is presented: SiGe BiCMOS, nanometer bulk and SOI CMOS technologies. This work...
This work demonstrates the feasibility of a distributed voltage controlled oscillator (DVCO) designed for WLAN applications in a 65 nm CMOS process with standard VLSI backend. This DVCO achieves a tuning range of 1.1 GHz (from 10.6 GHz to 11.7 GHz) and a measured phase noise of -116 dBc/Hz at 1 MHz offset from the carrier. To achieve such performances, the DVCO consumes a DC current of 36 mA from...
The full aspects of a 23 GHz BiFET LNA implementation are reported in this work. Integrated in a 0.25 mum BiCMOS technology, the circuit exhibits a 14 dB gain at 22.8 GHz for a 4 mA current consumption under 2.5 V. S11 and S22 parameters are less than -16 dB and -13 dB respectively. A 6.9 dB minimum noise figure is obtained at 22.4 GHz. A large part of the paper also deals with high frequency layout...
This paper presents the design of a distributed voltage controlled oscillator (DVCO). This oscillator has been designed in a low-cost low-power standard STMicroelectronics 65nm CMOS process. The DVCO achieves a tuning range from 9.6GHz to 11.6GHz, a phase noise better than -101dBc/Hz at 1MHz offset from the carrier and a total power consumption of 29mW
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.