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Stealth Dicing (SD) technology has high potential to replace the conventional blade sawing and laser grooving. The dicing method has been widely researched since 2005 [1–3] especially for thin wafer (⇐ 12 mils). SD cutting has good quality because it has dry process during laser cutting, extremely narrow scribe line and multi-die sawing capability. However, along with complicated package technology,...
This paper presents an experimental comparison of the block-oxide (BO) source/drain-tied (SDT) (BOSDT) polycrystalline-silicon (poly-Si) thin-film transistor (poly-Si TFT) with additional poly-Si body (APSB) against the zero-BO (ZBO) SDT (ZBOSDT) poly-Si TFT with APSB. The APSB scheme is created when the isolation process takes place after annealing of the source/drain regions. The experimental results...
In this paper, a non-classical body-tied vertical field-effect transistor (BTVFET) utilizing the self-aligned technique is presented and demonstrated. Based on the simulations, we find out that the electrical characteristics of the BTVFET are better than that of the conventional SOI VFET, including the outstanding ability of heat dissipation, higher channel mobility, lower parasitic capacitance, and...
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