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Both drain-side and source-side engineering by adding Nad and Pad layers to obtain a weak snapback characteristic nLDMOS are presented in this work. It is a novel method to reduce trigger voltage (Vt1) and to increase holding voltage (Vh). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage and holding voltage distributions...
In this study, a capping layer was deposited after CMP polish when finish the SiO2 layer. These interrelated problems can be solved with a proper fabrication process strategy. This effective strategy will eliminate copper extrusion using in many semiconductor processes. Stronger interface reduce the diffusion of Cu through IMD.
This study proposes a brand new method for identifying the mechanism that obtains when various current densities are individually applied to the architecture of WLCSP. A multi-steps current-destroying method was applied to clarify the effect of current density and the failure mechanism, both the environments and testing qualifications for these packages are becoming increasingly demanding. Failure...
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