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15 nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides, retains 2.7 decades memory window for 10 years below 10 V write / erase (w/e) voltages. S-factor is controlled by source/drain (S/D) junction depth and channel concentration. It is experimentally shown that S to D direct tunneling determines a physical limit of S-factor control...
It is shown that, for 35 nm gate length, a silicon nitride trap memory using double junction tunneling can retain more than 4 decades memory window for 10 years in less than 9 volts w/e voltage, where 1E+6 w/e cycle endurance is attained simultaneously. This is due to Coulomb blockade and quantum confinement in Si nanocrystals lying between double tunnel oxides, and further improvement is possible...
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