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High hole concentration Li-doped NiZnO thin films were grown by metal–organic chemical vapor deposition (MOCVD). The crystalline, optical, electrical, and morphological characteristics of the NiZnO films were studied as a function of lithium content. The resistance of the films decreased and the hole concentration greatly increased with increasing lithium content. However, the crystalline and optical...
Donor doping of IIIA elements, including Ga and In, was employed in the growth of Hg 1-x Cd x Te (MCT) heterolayers consisting of a wide-bandgap (x = 0.4) layer on the top of a narrow-bandgap one were grown on (111)B CdTe substrates by liquid phase epitaxy with a Te-rich solution. The doping properties of selected impurities in the cap layer (i.e., the wide-bandgap layer)...
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