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A low supply voltage fully-integrated 12.5 Gb/s laser diode driver IC was realized in a 0.2 mum 60 GHz fT SiGe BiCMOS process. A three-fold power consumption reduction versus existing drivers was achieved by using a 3.3 V supply and a dynamic emitter follower having a local positive feedback loop that boosts the drive strength of the leg that controls the turning-off output switch, without taking...
Notice of Violation of IEEE Publication Principles??Low Voltage 12.5Gb/s SiGe BiCMOS Laser Diode Driver Using a Bias Current Modulation Canceling Technique??>by Maxim, A.in the Proceedings of the 2006 IEEE Compound Semiconductor Integrated Circuit Symposium,Nov. 2006 Page(s):141 - 144After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication...
Notice of Violation of IEEE Publication Principles??86dB?? 10Gb/s SiGe Transimpedance Amplifier Using Photodiode Capacitance Neutralization and Vertical Threshold Adjustment??by Maxim, A.in the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2006Oct. 2006 Page(s):1 - 4After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication...
Notice of Violation of IEEE Publication Principles??A low voltage 10Gbps SiGe laser diode driver using adaptive RC compensation and common-mode feedback based current generators??by Maxim, A.in the Proceedings of the 2004 Symposium on VLSI Circuits, 2004. Digest of Technical Papers.17-19 June 2004 Page(s): 400 - 403After careful and considered review, it has been determined that the above paper is...
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