The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the...
Hot-carrier effects are thoroughly investigated in deep submicron N- and P-channel SOI MOSFETs, for gate lengths down to sub-0.1 /spl mu/m. Three main types of hot-carrier injections (maximum gate current, maximum substrate current and parasitic bipolar transistor action) are studied. A reliable lifetime prediction is proposed using accurate time-dependent laws for both N- and P-channel SOI MOSFETs.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.