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The impact of plasma-induced charging damage on dielectric breakdown was examined on both bulk silicon and Silicon-On-Insulator (SOI) MOSFETs for different conductors for various antenna area ratios. It was found that the Time-Zero Dielectric Breakdown (TZDB) distributions for the SOI devices were less dependent on antenna ratio and less susceptible to antenna charging damage than bulk silicon devices...
This work presents a new method for assessing the effect of floating-body charge on a fully- and partially depleted SOI device design space. Floating-body effects are incorporated into the device design criteria, V/sub T/ and I/sub OFF/ via transient-based evaluation of device performance using calibrated 2-D device simulation. Using this methodology, the worst-case shifts in V/sub T/ and I/sub OFF/...
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