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High gain Optical Beam Induced Current (OBIC) imaging has been used for the first time to examine the internal structural effects of electrical stress on thermally-isolated polysilicon resistors. The resistors are examined over a wide range of current densities, producing Joule heating up to /spl sim/1200/spl deg/C. Throughout this current density range, the OBIC images indicate a clustering of dopant...
DC and pulsed-DC electromigration tests were performed at the wafer level using standard and self-stressing test structures. DC characterization tests over a very large temperature range (180 to 560/spl deg/C) were consistent with an interface diffusion mechanism in parallel with lattice diffusion. That data allowed for extraction of the respective activation energies and the diffusion coefficient...
A series of self-stressing test structures suitable for investigation of reliability failure mechanisms (hot carriers, electromigration, oxide breakdown) under realistic integrated circuit operating conditions, is described. These structures contain DC-controlled, high-frequency on-chip oscillators, which stress test structures. As a result, high-frequency (>200-MHz) stress-testing can be performed...
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