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A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this technology for picosecond pulse-sharpening applications...
A 500 GHz bandwidth GaAs MMIC sampling wafer probe is reported which incorporates a mechanical flexure and a micromachined GaAs IC for time domain on-wafer measurements. The GaAs IC incorporates a novel high speed pulse sharpener and a two-diode sampling bridge with a micromachined GaAs tip.<<ETX>>
Significant advances in millimeter-wave devices and integrated circuits have been achieved over the past several years, yet the majority of measurements reported have been extrapolated from DC-65 GHz data, relying only on linear projections to predict the EHF performance of these devices and circuits. The only solution to this problem is to develop measuring instruments with greater bandwidths. Recently,...
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