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The density of defect states at the Fermi level, g(E/sub F/), has been determined by capacitance vs. temperature (C-T) experiments carried out at different frequencies for a series of a-Si:H and a-SiGe:H samples. The films were deposited at different temperatures in a Schottky configuration, and they were investigated in both the annealed state and the light-soaked state. Coplanar conductivity measurements...