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Investigates the characteristics of a new injection transistor logic (ITL) fabricated by vapour-phase epitaxy and ion implantation. The maximum current gain of the Si-ITL-inverter is about 150. The propagation delay t/sub pd/ was determined by the ring oscillator and maximum frequency method. At a power of 100 mu W per gate for this inverter, t/sub pd/ is about 500 ps and 850 ps for 60 mu W. In the...