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To solve the simulation convergence problem of enhancement mode gallium nitride high-electron mobility transistor (GaN HEMT) models, this paper proposes a nonsegmented model for GaN HEMT, which uses nonsegmented, smooth continuous equations to describe the static and dynamic characteristics of GaN HEMT. Furthermore, the static characteristic of GaN HEMT obtained by the nonsegmented model is verified...
A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent...
Compared with Si MOSFET, the GaN FET devices have advantages in the electrical characteristics, thermal properties and mechanical properties. This paper compares electrical properties of the GaN FET and Si MOSFET. Evaluation of the GaN FET based on flyback-forward high gain DC/DC converter at soft-switching condition are presented in detail. In addition, the power loss analysis of GaN FET based flyback-forward...
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