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This paper presents an experimental analysis of the noise measurements performed in germanium on insulator (GeOI) 0.12 mum PMOS transistors. The front gate stack is composed of a SiO2/HfO2 material with a TiN metal gate electrode. The result is an aggressively reduced equivalent oxide thickness (EOT) of 1.8 nm. The buried oxide is used as a back gate for experimental purposes. Front gate and back...
Germanium MOSFET is considered as a promising alternative to silicon due to its intrinsically higher carrier mobility, especially for holes. Using appropriate channel and pocket implants, this paper presents for the first time well-behaved short channel devices characteristics featuring a negative Vth and no parasitic conduction at the BOx interface. After a brief presentation of the device fabrication,...
For the first time, we report high-kappa/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI) wafers obtained by the Ge enrichment technique. The highest mobility peak (200 cm2/V.s) and driving current (ION= 115 muA/ mum at VG - Vth = -0.8 V and VDS = -1.2 V, for L = 0.5 mum) have been demonstrated for GeOI HfO2/TiN pMOSFETs on Ge layers as thin as 50 nm. As compared...
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