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The conductance in a N–I–MgB 2 tunnel junction is studied for the case where the c-axis of the MgB 2 is orientated perpendicular to the interface. The thick barrier limit is taken. It is assumed that the electric current is composed of two currents, one which describes the tunneling in the π-band in the MgB 2 and the other, the tunneling into the σ-band. The Bogoliubov–de Gennes...