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A simple process is presented that realizes carbon nanotube (CNT) arrays that meet the process and structure requirements for use in large-scale integrated circuits. Ni particles are formed densely on a conductive TiN layer on SiO2/Si substrates through nucleation and growth by sputtering, which was stopped prior to percolation of the Ni particles. Ni particles as dense as 2.8×1012cm−2 were formed...