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The growth and coalescence of thin (1.5–100.0 nm) filmsof bismuth were examined with ellipsometry and atomic force microscopy. The Bi films were thermally evaporated onto oxidized, heated (343 K) Si substrates. An effective medium approximation was used with the ellipsometry data to determine that the films grew in an island growth mode out to a thickness of about 8.0 nm before coalescing into a continuous...