The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Process induced variation of contact resistance (Rc) in Ti/graphene (single or multi-layer) devices is investigated physically and electrically. It is proposed that the increased Rc can be attributed to the carbon defects (vacancies) created during SPUTTER process, which is evidenced by Raman spectra. For the first time, the asymmetric behaviors in hole and electron transportation regions in different...
The junction contact characteristics between single layer graphene (SLG) and Ti, where Ti is prepared by various deposition processes, are investigated physically (via Raman) and electrically (via 2-point or 4-point probe measurement and residual resistance methods). For Ti deposited by electron beam evaporation (EBM) process, there are no noticeable Raman shift and weak D band in Ti junction with...
The authors have successfully demonstrated 3-D high-resolution real-time in vivo imaging by the miniature MEMS-scanner based DAC (dual-axes confocal) probes in both form-factors (10 and 5-mm diameter) by acquiring reflectance and fluorescence images. From the obtained high quality images, the DAC microscope shows great potential to substantially enhance clinical imaging practice by permitting sub-surface...
We report on a new 3-DOF CMOS-MEMS electrothermal probe, featuring embedded piezoresistive sensors. These probes have the potential to be used independently for general 3-DOF nanoscale manipulation/manufacturing/scanning without external actuation and sensing. In this probe design, 3-DOF piezoresistive sensors are used to track probe actuation and applied force in all three directions, and thermal...
In this paper, a method of fabricating active CMOS-MEMS AFM-like conductive probes with nanometer-sized probe tips for Tip-directed Field-emission Assisted Nanofabrication (TFAN) is reported. We envision an approach using tip-directed chemical vapor deposition (CVD) for the deposition of Si nanowires (SNWs), using field-emitted electrons to locally crack adsorbed precursors (silane/disilane) through...
We report on high current, low contact resistance, platinum-coated, lever-based CMOS-MEMS electrothermal probes with embedded displacement and force sensors for MEMS Instrumented Self-Configuring Integrated Circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure ICs, mainly RF ICs such as inductors, by mechanically addressing and passing current pulses through resistance...
Prober testers have been widely used by the semiconductor industry to determine whether the individual Integrated Circuits (IC) meet specifications of design. In this paper, probe contact tests are developed with different testing overdrive distance by using a microforce tester. The probe tests are subsequently applied to a single tungsten needle probe to examine the relationships between contact...
We report tip platform platinum sputtering and piezoresistive force sensing employed in CMOS-MEMS electrothermal probes. Pt sputtering is developed to achieve small and reliable electrical contact resistance. Piezoresistive sensors are used to track the force applied on the tips to detect the mechanical contact of the probe and the substrate and to aid in tip registration to the patterned substrates.
We describe multiple embedded polysilicon resistive sensors in CMOS-MEMS electrothermal probes as a step toward creating probe arrays for passing current on ICs to reconfigure resistance change (RC) vias. When not in contact, a low-resistivity unsilicided polysilicon (LP) resistor detects probe displacement indirectly through the temperature coefficient of resistance (TCR) effect. When in contact...
Summary form only given. Super-powerful pulsed systems needs more accurate timing synchronization because more high voltage gas switches for higher pulsed power will be needed. Therefore triggering of high voltage gas switches will become a key factor affecting performance of pulsed systems. This paper reports on an experimental study of developing a photoconductive semiconductor switches (PCSS) to...
We report on new lever-based CMOS-MEMS electrothermal probes for memory-intensive self-configuring integrated circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure ICs, mainly RF ICs such as inductors, by mechanically addressing and passing current through resistance change (RC) vias embedded within the chip circuitry. The lever-based actuation causes the probe tips...
We report on our progress on the development of CMOS-MEMS electrothermal conductive probes for memory-intensive self-configuring integrated circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure circuits by mechanically addressing and passing current through resistance change vias embedded within the chip circuitry. Cantilevered probes are designed with 1, 4, 9, 16 and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.