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Various ion-beam etching characteristics of diamond and selectivity between diamond and spin-on-glass (SOG) were examined. The maximum selectivity of diamond and SOG was 12.7 in oxygen reactive ion-beam etching process at 100V acceleration voltage. Using this etching condition and dot-shaped SOG mask, conical diamond field electron emitter arrays with 30nm curvature radius, 2.58μm base radius and...
A number of ion beam techniques were examined for their ability to etch single-crystal diamond. Both etching ability and the amount of resulting surface damage were examined. The techniques evaluated included ion beam etching (IBE), reactive ion beam etching (RIBE), ion beam assisted chemical etching (IBAE) and reactive ion beam assisted chemical etching (RIBAE). Etching rate of RIBAE processing of...
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