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A room-temperature continuous-wave operation of a 1.3 µm wavelength transistor laser (TL) with p/n/p configuration was achieved using AlGaInAs/InP 5 quantum-well active region A threshold current (emitter current) of 17 mA was obtained for a stripe width of 1.8 µm and a cavity length of 500 µm, and it was controlled by the collector-base voltage. Even though the current gain was only 0.01, three terminal...
1.3-μm AlGaInAs/InP buried heterostructure lasers were prepared by a low-pressure organo-metallic vapor-phase-epitaxy with in-situ thermal cleaning. The regrowth interface quality dependence on thermal cleaning time has been investigated from their lasing properties as well as electroluminescence property below the threshold. As the results, under condition of PH3 atmosphere in the organo-metallic...
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