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We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.
The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor fT and increases varactor tunning range. However, it can actually decrease fmax. We examine how process features...
Different gate stack optimizations and substrate dependent strain interactions have been studied and implemented in a cost-effective 28nm VLSI ultra low power technology. Drive current improvements for NFET ID,SAT = 870µA/µm and PFET ID,SAT = 465µA/µm at IOFF = 1nA/µm and VDS = 1V can be demonstrated by using compressive and tensile contact layers on (100)/<110> substrates. Work function optimizations...
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