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This paper reports on the conduction mechanisms and trapping effects in SiO2/4H-SiC MOS-based devices subjected to post deposition annealing in N2O. In particular, the anomalous Fowler-Nordheim (FN) tunnelling through the SiO2/4H-SiC barrier observed under consecutive reverse bias sweeps was studied by temperature and time dependent gate current measurements. The excess of gate current with respect...
This paper reports on nanoscale electrical investigations on some dielectrics that can be adopted to optimize the performances of SiC and GaN transistors. In particular, in the case of SiC the discussion is focused on the optimization of SiO2/SiC interfaces in 4H-SiC MOSFETs technology with particular attention to the active doping incorporation during the post oxide deposition thermal processes....
Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), μRaman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been...
In this paper, we show that Graphene (Gr) can provide highly laterally homogeneous Schottky or ohmic contacts to AlxGa1-xN/GaN heterostructures even without any thermal treatment. Current transport from Gr to the AlGaN/GaN Two Dimensional Electron Gas (2DEG) was investigated by local I–V measurements using Conductive Atomic Force Microscopy (CAFM). The AlGaN microstructure was found to play a key...
In this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nanovoids near the surface that locally suppress the amount of self-interstitials (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a...
The evolution of the electrically active acceptor profiles and of the surface morphology in 4H-SiC implanted with multiple energy (from 550 to 40 keV) Al ions was investigated by the combined use of scanning capacitance microscopy (SCM) and atomic force microscopy (AFM), depending on the post-implantation annealing conditions at temperatures from 1400 degC to 1650 degC in Ar or Ar+SiH4 ambient. Medium...
In this work we investigate the promising properties of F in helping the B confinement in pre-amorphized Si, looking into the physical mechanisms acting. We studied also the effect of F on the electrical activity of B-doped junctions in pre-amorphized Si. The carrier dose, measured by four-point probe and Hall effect techniques, lowers because of F, with respect to the sample implanted only with B...
The effects of thermal annealing either on the electrical activation of implanted species or device isolation were investigated. Silicon implantation was used for n-type doping, Magnesium for p-type doping and/or devices edge termination, while Nitrogen for devices isolation. The ions species were implanted on n-type GaN films (~ 2times1016 cm-3) at energies between 30 and 180 keV and fluences in...
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