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As NAND technology is moved from 2D to 3D, there are a few CMP steps to be newly added such as channel poly CMP and staircase (or ILD) CMP. Channel poly CMP is to polish many materials simultaneously such as SiN, oxide and poly-Si therefore it needs individual material rate tunability to meet final topography requirement. Staircase CMP process is identical to conventional ILD or IMD CMP but it needs...
This paper reports a three-step fabrication method for highly ordered silica nanowire bunch arrays of diversiform shapes. After patterning of organic polymers on Si substrates through photo lithography, oxygen plasma bombardment is applied to fabricate nanowire bunch arrays. On one hand, oxygen plasma exploits Si source from the substrates, and, subsequently, the gaseous Si react with active oxygen...
We propose a new technique for femtosecond pulse characterization — transient-grating self-referenced spectral interferometry. Using this technique, we built an extremely simple, alignment-free device and successfully sub-two-cycle 10-fs pulses at 1.75 μm.
The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al2O3/IrOx structure with a small EOT of ˜6 nm have been investigated. The IrOx metal nanocrystals with a small size of ˜3 nm and high-density of ˜0.7??1013/cm2 have been observed. The enhanced memory characteristics with a large memory window of ΔV˜4V at a small gate voltage of ≪5V and good endurance of 104 cycles are...
High-voltage (4-6 kV) 4H-SiC-based bipolar junction transistors were designed, fabricated, and characterized. Various design and process optimization techniques to improve the on state and the forward blocking performance of these devices were studied and incorporated. Using the conventional base contact implantation process, devices with blocking voltages up to 4 kV and specific on-resistance (R...
The switching versus forward conduction performance tradeoffs of 10 kV 4H-SiC PiN diodes are optimized using emitter injection control. Experimental results show superior switching performance with up to a 40% reduction in critical recovery parameters such as Qrr and JRP, while simulations indicate a better performance tradeoff than conventional PiN diodes in the presence of sufficiently long drift...
High-voltage (6 kV) 4H-SiC NPN BJTs are demonstrated using a novel self-aligned selectively grown base contact process. The devices exhibit specific on-resistance values (Ron,sp) as low as 28 mOmegacm2, the lowest reported to date and below the unipolar limit. The current gain in the active region is found to be 3 and closely related to the depth of the isolation trench. The open-base turn-off curves...
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