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A non-charge-sheet analytic model for long-channel symmetric double-gate (DG) MOSFETs with smooth transition between partially and fully depleted (PD and FD) operation modes is presented in this paper. The 1-D Poisson's equation with the mobile and dopant charge terms is first solved to obtain the continuous channel potential in the symmetric DG structure physically. A non-charge-sheet analytic drain-current...
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