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A numerical study on the characteristics of dual-material gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the single-material gate tunnel field-effect transistor (SMG-NTFET), the numerical simulation results demonstrate that the DMG-NTFET has lower leakage current IOFF with a negligible loss of ION. Moreover, the impact...
A dual-material-gate junctionless nanowire transistor (DMG-JNT) is proposed in this paper. Its characteristic is demonstrated and compared with a generic single-material-gate JNT using 3-D numerical simulations. The results show that the DMG-JNT has a number of desirable features, such as high on -state current, a large on/off current ratio, improved transconductance , high unity-gain frequency...
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