The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) application. The LNA is composed of cascode input stage and common emitter (CE) output stage with dual loop feedbacks. The novel cascode-CE current reuse topology replaces the traditional two stages topology so as to obtain low power consumption. The emitter...
A Cascode SiGe BiCMOS low-noise amplifier (LNA) is presented for ultra-wideband (UWB) application. The emitter degenerative inductive technique is employed to achieve input impedance matching and optimize the noise performance. The output impedance matching is achieved by resistance-inductor shunt feedback. The current reuse topology is adopted to achieve high gain with low power consumption. Based...
A SiGe HBT low-noise amplifier (LNA) for UWB application is presented. According to the analysis for noise of common base transistor, noise canceling structure for SiGe HBT is proposed to reduce the noise arising from common transistor, thus reduce the noise of LNA. Meanwhile it also compensate the gain of the LNA, thus improves the gain flatness. The chip layout has been designed, its area is 0.56×0...
An RF LDMOS high power amplifier operating at WCDMA downlink frequency of 2140 MHz for base station application is presented. The quiescent operating point was determined by DC simulation and then the corresponding simple and practical bias circuit composed of 1/4λ microstrip lines and bypass capacitors was designed. A load-pull simulation method was used to obtain the optimal input and output impedances...
In this paper, based on small signal models of hetero-junction bipolar transistors (HBTs) with different feedback circuits, the expressions for S parameters of the device are derived to analyze the influence of different feedback technologies on amplifier performance, especially on the stability and the gain flatness of Ultra-Wideband Low Noise Amplifier(UWB LNA). When a serial inductor or a parallel...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.