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The dependence of the interface-trap-induced scattering on the electron kinetic energy (epsivele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate epsivele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as epsivele increases, the interface-trap-induced...
Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped...
Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-kappa gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-kappa pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (DeltaId/Id) by the surface holes is smaller in...
Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (mu) : mu increase with Nsub increase in (110)/<110>...
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