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Inert gases, such as helium, argon and neon, have been successfully used to homogenize the plasma discharge in preparing a-SiGe alloys. In this work, varying proportional helium in hydrogen dilution is used to prepare μc-SiGe alloys by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technology on a low-temperature substrate. The optical emission intensities of SiH* and Hα...
A series of μc-Si:H thin films with high deposition rate were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) process under high power and high-pressure conditions. Keeping the other parameters constant, the total gas flow rate was adjusted from 100sccm to 500sccm The influence of total gas flow rate on the deposition process, electrical and micro-structural properties...
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