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The charge pumping (CP) technique in polysilicon thin-film transistors (TFTs) is optimized by adjusting the gate pulse transition times to eliminate the geometric component of the CP current. Improved CP curves similar to those in MOSFETs are obtained for polysilicon TFTs. Typical trap state density (Dmacrt) energy distribution within the upper part of the band gap and the mean Dt value ([(Dmacr...
Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within...
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