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Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard...
We demonstrate a scheme to scale the bandwidth of a frequency comb generated by phase modulation of CW lasers using four-wave mixing in a silicon nano-waveguides, resulting in >100 comb lines spaced by 10-GHz within 5-dB bandwidth.
Currently, silicon carbide (SiC) technology is developing rapidly. Compared to conventional silicon devices, it has high voltage, high temperature, fast switching speed and low on-resistance and other excellent features. Thus it will play an invaluable role in the next electrical grid. This paper describes the basic characteristics and development of SiC devices. Combined with the future requirements...
Laser technique application to polycrystalline silicon thin-film solar cell fabrication on glass substrates has received appreciable attention. In this paper, a laser-doping technique is developed for plasma-deposited amorphous silicon film. A process involving recrystallization, phosphorous diffusion and antireflection coating can be achieved simultaneously using the laser annealing process. The...
The effect of film thickness on the microstructural evolution of low pressure chemical vapor deposited amorphous silicon (a-Si) during excimer-laser-induced crystallization is reported. For film thickness less than 50 nm, homogenous nucleation and recalescence are the conditioning factors for the re-solidified phase. For the 30-nm-thick a-Si films, a wide laser energy fluence (>100 mJ/cm 2...
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