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The effects of the modification of electrode/ceramic interfaces through a chemical solution deposition-derived PbO buffer layer on the fatigue endurance of lead zirconate titanate (PZT) thin films were investigated. The grain size and the surface roughness of the PZT films increased through PbO interfacial modification. Moreover, the PZT films with PbO interfacial modification had a better crystallographic...
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 400-nm-thick Bi3.15Nd0.85Ti3O12 (BNdT) ferroelectric film and 4-nm-thick hafnium oxide (HfO2) layer on silicon substrate have been fabricated and characterized. It is demonstrated that the Pt/Bi3.15Nd0.85Ti3O12/ HfO2/Si structure exhibits a large memory window of around 1.12 V at an operation voltage of 3.5 V. Moreover, the MFIS memory...
Ferroelectric B3.15Nd0.85Ti3O12 (BNdT) thin films were deposited on SrTiO3/Si, HfO2/Si and Si substrates respectively by sol-gel process. The electrical properties were studied for Metal-Ferroelectric-Semiconductor (MFS) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) capacitors. The MFIS structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization...
Anti-ferromagnetic BiFeO3/Bi3.15Nd0.85Ti3O12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ??C/cm2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO2/Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are...
{0.75SrBi2Ta2O9-0.25Bi3 TiTaO9} (SBT-BTT) thin films have been prepared by using the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBT-BTT thin films were studied. The SBT-BTT thin films were produced at 750degC . The surface morphology of SBT-BTT thin films showed more uniform grain distribution. The grain size and surface roughness...
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