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We demonstrate BPSK modulation using a silicon traveling-wave modulator at data rate up to 48 Gb/s, with 7.4 Vpp differential RF driving voltage. The performance of the silicon BPSK modulator is compared with a commercial Lithium Niobate phase modulator, showing better dispersion tolerance.
This paper examines the validity of the widely used parabolic effective mass approximation by computing the ballistic injection velocity of a double-gate, ultrathin-body (UTB) n-MOSFET. The energy dispersion relations for a Si UTB are first computed by using a 20-band sp3d5s* -SO semiempirical atomistic tight-binding (TB) model coupled with a self-consistent Poisson solver. A semiclassical ballistic...
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